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| HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 April 1995 15A, 20A, 400V and 500V N-Channel IGBTs Packages HGTH-TYPES JEDEC TO-218AC EMITTER COLLECTOR COLLECTOR (FLANGE) GATE Features * 15A and 20A, 400V and 500V * VCE(ON) 2.5V * TFI 1s, 0.5s * Low On-State Voltage * Fast Switching Speeds * High Input Impedance * No Anti-Parallel Diode Applications * Power Supplies * Motor Drives * Protection Circuits HGTP-TYPES JEDEC TO-220AB COLLECTOR (FLANGE) EMITTER COLLECTOR GATE Description The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low-power integrated circuits. PACKAGING AVAILABILITY PART NUMBER HGTH20N40C1 HGTH20N40E1 HGTH20N50C1 HGTH20N50E1 HGTP15N40C1 HGTP15N40E1 HGTP15N50C1 HGTP15N50E1 PACKAGE TO-218AC TO-218AC TO-218AC TO-218AC TO-220AB TO-220AB TO-220AB TO-220AB BRAND G20N40C1 G20N40E1 G20N50C1 G20N50E1 G15N40C1 G15N40E1 G15N50C1 G15N50E1 E G Terminal Diagram N-CHANNEL ENHANCEMENT MODE C NOTE: When ordering, use the entire part number. TC = +25oC, Unless Otherwise Specified HGTH20N40C1 HGTH20N50C1 HGTH20N40E1 HGTH20N50E1 Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . .VCES 400 500 Collector-Gate Voltage RGE = 1M. . . . . . . . . . . . . . . . VCGR 400 500 Reverse Collector-Emitter Voltage . . . . . . . . . . . . VCES(rev.) -5 -5 Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE 20 20 Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . IC 20 20 Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 35 35 Power Dissipation at TC = +25oC . . . . . . . . . . . . . . . . . . . PD 100 100 Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . 0.8 0.8 Operating and Storage Junction Temperature Range . . . TJ, TSTG -55 to +150 -55 to +150 Absolute Maximum Ratings HGTP15N40C1 HGTP15N40E1 400 400 -5 20 15 35 75 0.6 -55 to +150 HGTP15N50C1 HGTP15N50E1 UNITS 500 V 500 V -5 V 20 V 15 A 35 A 75 W 0.6 W/oC oC -55 to +150 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 File Number 2174.3 3-61 Specifications HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS HGTH20N40C1, E1, HGTP15N40C1, E1 PARAMETERS Collector-Emitter Breakdown Voltage Gate Threshold Voltage Zero-Gate Voltage Collector Current SYMBOL BVCES VGE(TH) ICES TEST CONDITIONS IC = 1mA, VGE = 0 VGE = VCE, IC = 1mA VCE = 400V, TC = +25oC VCE = 500V, TC = +25oC VCE = 400V, TC = +125oC MIN 400 MAX HGTH20N50C1, E1, HGTP15N50C1, E1 MIN 500 MAX UNITS V 2.0 - 4.5 250 1000 100 -5 2.0 - 4.5 250 1000 100 -5 V A A A A nA mA VCE = 500V, TC = +125oC Gate-Emitter Leakage Current Reverse Collector-Emitter Leakage Current Collector-Emitter on Voltage IGES ICE VCE(ON) VGE = 20V, VCE = 0 RGE = 0, VEC = 5V IC = 20A, VGE = 10V IC = 35A, VGE = 20V Gate-Emitter Plateau Voltage On-State Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 40E1, 50E1 40C1, 50C1 Turn-Off Energy Loss per Cycle (Off Switching Dissipation = WOFF x Frequency) 40E1, 50E1 40C1, 50C1 Thermal Resistance Junction-to-Case RJC HGTH, HGTM HGTP WOFF IC = 10A, VCE(CLP) = 300V, L = 25H, TJ = +100oC, VGE = 10V, RG = 25 VGEP QG(ON) tD(ON)I tRI tD(OFF)I tFI IC = 10A, VCE = 10V IC = 10A, VCE = 10V IC = 20A, VCE(CLP) = 300V, L = 25H, TJ = +100oC, VGE = 10V, RG = 25 - 2.5 3.2 6 (Typ) 33 (Typ) 50 50 400 - 2.5 3.2 6 (Typ) 33 (Typ) 50 50 400 V V V nC ns ns ns 680 (Typ) 400 1000 500 680 (Typ) 400 1000 500 ns ns 1810 (Typ) 1070 (Typ) 1.25 1.67 1.25 1.67 J J oC/W oC/W INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 3-62 HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 Typical Performance Curves 40 VGE = 10V, RGEN = RGS = 50 ICE, COLLECTOR CURRENT (A) RATED POWER DISSIPATION (%) -50 -25 0 +25 +50 +75 +100 +125 +150 +175 35 30 25 20 15 10 5 0 -75 100 80 60 40 20 0 +25 +50 +75 +100 +125 +150 TJ , JUNCTION TEMPERATURE (oC) TC , CASE TEMPERATURE (oC) FIGURE 1. MAX. SWITCHING CURRENT LEVEL. RG = 25, VGE = 0V ARE THE MIN. ALLOWABLE VALUES FIGURE 2. POWER DISSIPATION vs TEMPERATURE DERATING CURVE NORMALIZED GATE THRESHOLD VOLTAGE 35 VGE = VCE, IC = 1mA 1.3 1.2 1.1 1.0 0.9 0.8 0.7 ICE, COLLECTOR CURRENT (A) 30 25 20 15 10 PULSE TEST, VCE = 10V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX. +25oC 5 +125oC 0 0 2.5 5.0 -40oC -50 0 +50 +100 +150 (oC) 7.5 10.0 TC , JUNCTION TEMPERATURE VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3. TYPICAL NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE TC = +25oC 35 VGE = 20V ICE, COLLECTOR CURRENT (A) 30 25 20 15 10 5 0 0 1 2 3 4 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 5 VGE = 4V VGE = 10V VGE = 8V VGE = 6V VGE = 7V ICE, COLLECTOR CURRENT (A) FIGURE 4. TYPICAL TRANSFER CHARACTERISTICS 35 30 25 20 15 10 5 0 0 1 2 3 4 VCE(ON) , COLLECTOR-TO-EMITTER VOLTAGE (V) +25oC PULSE TEST, VGE = 10V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX. VGE = 5V FIGURE 5. TYPICAL SATURATION CHARACTERISTICS FIGURE 6. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE vs COLLECTOR CURRENT 3-63 HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 Typical Performance Curves (Continued) 2700 VCE(ON) , COLLECTOR-EMITTER ON VOLTAGE (V) f = 1MHz 3.00 2250 C, CAPACITANCE (pF) 2.75 IC = 20A, VGE = 10V 2.50 IC = 20A, VGE = 15V 2.25 1800 CISS 1350 900 2.00 1.75 IC = 10A, VGE = 10V 450 CRSS 0 COSS 0 10 20 30 40 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 50 1.50 +25 IC = 10A, VGE = 15V +50 +75 +100 +125 +150 TJ , JUNCTION TEMPERATURE (oC) FIGURE 7. CAPACITANCE vs COLLECTOR-TO-EMITTER VOLTAGE FIGURE 8. TYPICAL VCE(ON) vs TEMPERATURE 400 IC = 20A, VGE = 10V, VCL = 300V L = 25H, RG = 25 tD(OFF)I , SWITCHING TIME (ns) VGE 300 VCE 200 IC WOFF = IC * VCEdt 100 0 +25 +50 +75 +100 +125 TJ , JUNCTION TEMPERATURE (oC) +150 FIGURE 9. TYPICAL TURN-OFF DELAY TIME FIGURE 10. TYPICAL INDUCTIVE SWITCHING WAVEFORMS 800 700 tFI , SWITCHING TIME (ns) 600 40E1/50E1 500 400 40C1/50C1 300 200 100 0 +25 IC = 10A, VGE = 10V, VCL = 300V L = 25H, RG = 25 tFI , SWITCHING TIME (ns) 800 700 600 500 400 40C1/50C1 300 200 100 0 +25 40E1/50E1 IC = 20A, VGE = 10V, VCL = 300V L = 25H, RG = 25 +50 +75 +100 +125 +150 +50 +75 +100 +125 +150 TJ , JUNCTION TEMPERATURE (oC) TJ , JUNCTION TEMPERATURE (oC) FIGURE 11. TYPICAL FALL TIME (IC = 10A) FIGURE 12. TYPICAL FALL TIME (IC = 20A) 3-64 HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 Typical Performance Curves (Continued) 1000 WOFF , TURN-OFF ENERGY LOSS (J) 900 800 700 600 500 400 300 200 100 0 +25 10A, 40E1/50E1 20A, 40C1/50C1 L = 25H, RG = 25 20A, 40E1/50E1 VCE, COLLECTOR-EMITTER VOLTAGE (V) VGE = 10V, VCE(CLP) = 300V 500 10 BVCES VCC = BVCES 375 RL = 25 IG(REF) = 0.76mA VGE = 10V GATEEMITTER VOLTAGE VCC = 0.25BVCES 250 NOTE: FOR TURN-OFF GATE CURRENTS IN EXCESS OF 3mA. VCE TURN-OFF IS NOT ACCURATELY REPRESENTED BY THIS NORMALIZATION. COLLECTOR-EMITTER VOLTAGE 0 +50 +75 +100 +125 +150 TJ , JUNCTION TEMPERATURE (oC) 20 IG(REF) IG(ACT) TIME (s) 80 IG(REF) IG(ACT) 0 4 8 VGE , GATE-EMITTER VOLTAGE (V) 6 125 10A, 40C1/50C1 2 FIGURE 13. TYPICAL CLAMPED INDUCTIVE TURN-OFF SWITCHING LOSS/CYCLE FIGURE 14. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT. (REFER TO APPLICATION NOTES AN7254 AND AN7260 ON THE USE OF NORMALIZED SWITCHING WAVEFORMS) Test Circuit RL = 4 L = 25H VCC VCE(CLP) = 300V 1/RG = 1/RGEN + 1/RGE RGEN = 50 80V 20V 0V RGE = 50 FIGURE 15. INDUCTIVE SWITCHING TEST CIRCUIT All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 3-65 |
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